Fabrication and characterization of Fe³⁺-doped titania semiconductor electrodes with p-n homojunction devicesLIAU, Leo Chau-Kuang; LIN, Chu-Che.Applied surface science. 2007, Vol 253, Num 21, pp 8798-8801, issn 0169-4332, 4 p.Article

Electrochemically deposited p-n homojunction cuprous oxide solar cellsHAN, Kunhee; MENG TAO.Solar energy materials and solar cells. 2009, Vol 93, Num 1, pp 153-157, issn 0927-0248, 5 p.Article

Internal quantum efficiency for solar cellsYANG, W. J; MA, Z. Q; TANG, X et al.Solar energy. 2008, Vol 82, Num 2, pp 106-110, issn 0038-092X, 5 p.Article

Improvement in the efficiency of Cu-doped CdS/non-doped CdS photovoltaic cells fabricated by an all-vacuum processKASHIWABA, Yasube; ISOJIMA, Katsuaki; OHTA, Koji et al.Solar energy materials and solar cells. 2003, Vol 75, Num 1-2, pp 253-259, issn 0927-0248, 7 p.Conference Paper

p-Type and n-type Cu₂O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical propertiesLIANGBIN XIONG; SHENG HUANG; XI YANG et al.Electrochimica acta. 2011, Vol 56, Num 6, pp 2735-2739, issn 0013-4686, 5 p.Article

Emission of lights of various colors from p-CdS:Cu/n-CdS thin-film diodesKASHIWABA, Yasube; SATO, Jun; ABE, Takashi et al.Applied surface science. 2003, Vol 212-13, pp 162-165, issn 0169-4332, 4 p.Conference Paper

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctionsLU, J. G; ZHU, L. P; YE, Z. Z et al.Journal of crystal growth. 2005, Vol 283, Num 3-4, pp 413-417, issn 0022-0248, 5 p.Article

Doping of β-FeSi₂ films with boron and arsenic by sputtering and its application for optoelectronic devicesZHENGXIN LIU; OSAMURA, Masato; TANOUE, Hisao et al.Optical materials (Amsterdam). 2005, Vol 27, Num 5, pp 942-947, issn 0925-3467, 6 p.Conference Paper

Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance―voltage measurementsLEE, Sunghun; LEE, Jeong-Hwan; KWON HYEON KIM et al.Organic electronics (Print). 2012, Vol 13, Num 11, pp 2346-2351, issn 1566-1199, 6 p.Article

Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO₂ thin filmsTIEYING YANG; XIUBO QIN; WANG, Huan-Hua et al.Thin solid films. 2010, Vol 518, Num 19, pp 5542-5545, issn 0040-6090, 4 p.Article

ZnO p-n junctions produced by a new routeHAZRA, S. K; BASU, S.Solid-state electronics. 2005, Vol 49, Num 7, pp 1158-1162, issn 0038-1101, 5 p.Article